河南師范大學(xué)物理與電子工程學(xué)院導(dǎo)師:戴憲起

發(fā)布時(shí)間:2021-11-22 編輯:考研派小莉 推薦訪問(wèn):
河南師范大學(xué)物理與電子工程學(xué)院導(dǎo)師:戴憲起

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河南師范大學(xué)物理與電子工程學(xué)院導(dǎo)師:戴憲起 正文


戴憲起 博士
1964年10月生,教授,博士生導(dǎo)師。香港大學(xué)博士,河南省科技創(chuàng)新人才,河南省高校優(yōu)秀中青年骨干教師,美國(guó)物理學(xué)會(huì)會(huì)員,中國(guó)物理學(xué)學(xué)會(huì)會(huì)員。
曾先后多次赴香港大學(xué)、香港城市大學(xué)、香港科技大學(xué)進(jìn)行合作研究,多次到美國(guó)、香港參加國(guó)際會(huì)議。長(zhǎng)期從事凝聚態(tài)物理及表面物理的實(shí)驗(yàn)和理論方面的研究工作。近年來(lái),對(duì)石墨烯、拓?fù)浣^緣體等狄拉克新材料領(lǐng)域的一些前沿又具應(yīng)用前景的課題進(jìn)行了深入的理論研究,已取得了一系列很有價(jià)值的科研成果。到目前為止,已在 Appl.Phys.Lett.、Phys.Rev.B、J.Phys Conden.Matt.、Eur.Phys.J.B、Physica E 、Surf.Sci.等國(guó)內(nèi)外重要學(xué)術(shù)刊物上發(fā)表論文一百余篇,其中被SCI收錄六十多篇。曾主持承擔(dān)多項(xiàng)國(guó)家國(guó)家攀登計(jì)劃項(xiàng)目、國(guó)家自然科學(xué)基金、省科技攻關(guān)和自然科學(xué)基金等項(xiàng)目20余項(xiàng)。

研究領(lǐng)域: 低維與納米材料、狄拉克材料、寬禁帶半導(dǎo)體

研究組: 凝聚態(tài)物理,計(jì)算材料理論中心

發(fā)表的主要論文:
1.Robust surface state of intrinsic topological insulator Bi2Te2Se thin films: a first-principles study,Xian-Qi Dai,Bao Zhao,Jian-Hua Zhao,Yan-Hui Li,Ya-Nan Tang and Ning Li,J.Phys.: Condens.Matter 24,(2012) 035502 (6pp)
2.Jianhua Zhao,Xianqi Dai,Yawei Dai,Bao Zhao,and Maohai Xie,Lateral in-plane coupling between graphene nanoribbons: A density functional study,J.Appl.Phys.111,(2012) 043714;(6pp)
3.J.H.Zhao,X.Q.Dai,B.Zhao,Y.W.Dai and X.Zhao,The role of size in spin properties of zigzag graphene nanoribbon,Eur.Phys.J.B85,(2012) 220(6pp)
4.Yanan Tang,Zongxian Yang and Xianqi Dai,A theoretical simulation on the catalytic oxidation of CO on Pt/grapheme,Phys.Chem.Chem.Phys.2012,Advance Article,DOI: 10.1039/C2CP41441D (7pp)
5.Ya-Nan Tang,Ya-Wei Dai ,Bao Zhao Xian-Qi Dai and Zong-Xian Yang,Metal adatoms induced stability,electronic and magnetic behaviors on grapheme,INTEGRATED FERROELECTRICS 129,(2011) 102-110
6.Xian Qi Dai ,Jian Hua Zhao ,Mao Hai Xie ,Ya Nan Tang ,Yan Hui Li and Bao Zhao,F(xiàn)irst-principle study of magnetism induced by vacancies in graphene,Eur.Phys.J.B 80,(2011) 343–349 (SCI)
7.DAI Xian-Qi,TANG Ya-Nan,DAI Ya-Wei,LI Yan-Hui,ZHAO Jian-Hua ,ZHAO Bao and YANG Zong-Xian,The structure of Pt clusters on graphene doped with Nitrogen,Boron,and Silicon: A theoretical study,Chinese Physics B 20(5),(2011)056801(1-7) (SCI)
8.Xian-Qi Dai,Yan-Hui Li,Jian-Hua Zhao,Bao Zhao,F(xiàn)irst-principles study of Ge adsorbed on Perfect and defect grapheme,Physica E ,2011,43,1461-1464 (SCI)
9.Yanan Tang,Zongxian Yang,Xianqi Dai,Noble metals induced magnetic properties of grapheme,Journal of Magnetism and Magnetic Materials 323 (2011) 2441–2447
10.Yanan Tang,Zongxian Yang,and Xianqi Dai,Trapping of metal atoms in the defects on grapheme,J.Chem.Phys.135,(2011) 224704(p7)
11.Zongxian Yang,Xiaohu Yu,Zhansheng Lu,and Xianqi Dai,The direct oxidation of CO on the highly active Pt-skin Pt3Ni(111) surface: A first principles study,Advanced Materials Research 213 (2011) 147-151 (SCI)
12.Jianli Wang,Xiaoshan Wu,Xianqi Dai,and Dongmei Bai,F(xiàn)irst-principles study of Sr adsorption on InN(0001),Eur.Physics.J.B73,(2010)75-78
13.Jianli Wang,X.S.Wu,J.M.Dong,Dongmei Bai,and Xianqi Dai,The absorption of Be on the surface of (0001)InN,Appl.Surf.Sci.255,(2008) 2533-2537
14.Jianli Wang ,Xiaoshan Wu ,XianqiDai ,Dongmei Bai,Atomic structure for Mg on InN(0001) surface,Physics Letters A 373 (2009) 1796–1799
15.Xian-Qi Dai,Hui-Juan Yan ,Jian-Li Wang,Ya-Ming Liu,Zongxian Yang ,and M.H.Xie,The Effect of Cu on O Adsorption on ZnO(0001) Surface: A first-principles Study,J.Phys.: Condens.Matter 20,(2008) 095002(1-4)
16.Xian-Qi Dai,Jian-li Wang,Hui-juan Yan,Xin-hua Wu,M.H.Xie,Structural properties of oxygen on InN(0001) surface
Surface Science 601,( 2007) 2161-2165
17.Xian-Qi Dai,F(xiàn)eng-Zhen Huang,and Jun-Jie Shi,Localized excitons in self-formed GaN/AlxGa1-xN quantum dots,Moden Phys.Lett.B19,589(2005)
18.Xian-Qi Dai,Wei-Wei Ju,M.H.Xie,and S.Y.Tong,Ab initio study of indium quantum wire formation on flat and stepped Si(100) surfaces,Surface Review and Letters 12(4),483-487 (2005)
19.Y.G.Cao,S.H.Xu,W.Lu,X.Q.Dai,Y.F.Chan,N.Wang,Y.Liu,H.S.Wu,M.H.Xie,and S.Y.Tong,In situ revelation of a zinc-blende InN wetting layer during Stranski-Krastanov growth on GaN(0001) by molecular-beam epitaxy,Phys.Rev.B71,155322(2005))
20.Y.Huang,X.D.Chen,S.Fung,C.D.Beling,C.C.Ling,X.Q.Dai,and M.H.Xie,Current transport property of N-GaN/n-6H-SiC heterojuction: Influence of interface states,Appl.Phys.Lett.86,122102(2005)

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